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(R) STPS130 POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS 1A 30 V 150C 0.46 V SMA (JEDEC DO-214AC) STPS130A SMB (JEDEC DO-214AA) STPS130U Very low forward voltage drop for less power dissipation Optimized conduction/reverse losses trade-off which means the highest yield in the applications Surface mount miniature packages Avalanche capability specified DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and SMB, this device is especially intended for use in parallel with MOSFETs in synchronous rectification and low voltage secondary rectification. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Table 2: Order Codes Part Number STPS130A STPS130U Marking S130 G12 Value 30 7 TL = 130C = 0.5 tp = 10ms sinusoidal tp = 2s F = 1kHz square tp = 100s square tp = 1s Tj = 25C 1 45 1 1 1200 -65 to + 150 150 10000 Unit V A A A A A W C C V/s 1 dPt ot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) dTj August 2004 REV. 5 1/7 STPS130 Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter SMA SMB Value 30 23 Unit C/W Table 5: Static Electrical Characteristics Symbol IR * Tests conditions Tj = 25C VR = VRRM Reverse leakage current Tj = 125C Tj = 25C VF ** Forward voltage drop Tj = 125C Tj = 25C Tj = 125C Pulse test: ** tp = 5 ms, < 2% * tp = 380 s, < 2% Parameter Min. Typ 1.5 0.37 0.45 Max. 10 10 0.55 0.46 0.63 0.55 Unit A mA IF = 1A IF = 2A V To evaluate the conduction losses use the following equation: P = 0.37 x IF(AV) + 0.090 I F (RMS) 2 Figure 1: Average forward power dissipation versus average forward current PF(AV)(W) 0.6 Figure 2: Average forward current versus ambient temperature ( = 0.5) IF(AV)(A) 1.2 = 0.05 0.5 0.4 0.3 0.2 = 0.1 = 0.2 = 0.5 1.0 Rth(j-a)=Rth(j-I) =1 0.8 Rth(j-a)=100C/W 0.6 0.4 T 0.1 T 0.2 IF(AV)(A) 0.0 0.0 0.2 0.4 0.6 0.8 =tp/T 1.0 tp 0.0 1.2 =tp/T 0 25 tp 50 Tamb(C) 75 100 125 150 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1s) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25C) 1.2 1 power 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 25 50 75 100 125 150 2/7 STPS130 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA) IM(A) 8 7 6 5 4 3 Ta=100C Ta=50C Ta=75C Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB) IM(A) 8 7 6 5 Ta=50C 4 Ta=75C 3 IM t 2 1 0 1.0E-3 2 IM Ta=100C t 1 =0.5 t(s) 1.0E-2 1.0E-1 1.0E+0 0 1.0E-3 =0.5 t(s) 1.0E-2 1.0E-1 1.0E+0 Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMA) Zth(j-c)/Rth(j-c) 1.0 Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMB) Zth(j-c)/Rth(j-c) 1.0 0.8 0.8 0.6 = 0.5 0.6 = 0.5 0.4 = 0.2 0.4 T 0.2 = 0.2 = 0.1 Single pulse T 0.2 = 0.1 Single pulse tp(s) 1E-1 1E+0 1E+1 0.0 1E-2 =tp/T 1E+2 tp 1E+3 tp(s) 1.0E-1 1.0E+0 1.0E+1 0.0 1.0E-2 =tp/T 1.0E+2 tp 1.0E+3 Figure 9: Reverse leakage current versus reverse voltage applied (typical values) IR(A) 5E+3 1E+3 Tj=125C Figure 10: Junction capacitance versus reverse voltage applied (typical values) C(pF) 500 F=1MHz Tj=25C 200 1E+2 Tj=70C 100 1E+1 50 1E+0 Tj=25C 20 1E-1 0 5 10 VR(V) 15 20 25 30 VR(V) 10 1 2 5 10 20 30 3/7 STPS130 Figure 11: Forward voltage drop versus forward current (maximum values) Figure 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMA) Rth(j-a)(C/W) 120 P=1.5W IFM(A) 10.00 100 1.00 Tj=75C 80 Tj=25C Tj=125C 60 40 20 0.10 VFM(V) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 S(Cu)(cm) 0 0 1 2 3 4 5 Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMB) Rth(j-a)(C/W) 140 120 100 80 60 40 20 P=1.5W S(Cu)(cm) 0 0 1 2 3 4 5 4/7 STPS130 Figure 14: SMA Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L Figure 15: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/7 STPS130 Figure 16: SMB Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L Figure 17: SMB Foot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 6/7 STPS130 Table 6: Ordering Information Ordering type STPS130A STPS130U Marking S130 G12 Package SMA SMB Weight 0.068 g 0.107 g Base qty 5000 2500 Delivery mode Tape & reel Tape & reel Band indicates cathode Epoxy meets UL94, V0 Table 7: Revision History Date Jul-2003 Aug-2004 Revision 4A 5 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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